MOSFETs / Small Signal
2N7002
60 V, 300 mA N-channel enhancement-mode MOSFET in a compact SOT-23 package for logic-level switching and high-speed signal applications.
- VDS
- 60V
- ID
- 300mA
- RDS(on)
- 5Ω max
- Package
- SOT-23
- Tj
- 150°C max
- Environmental
- RoHSCompliant
Drain-source voltage
Continuous drain current
On-state resistance
Junction temperature
Key parameters
- Category
- MOSFETs
- Technology
- Trench MOSFET
- Polarity
- N-channel
- Configuration
- Single
- Package
- SOT-23 / TO-236AB
- Gate drive
- Logic level
- Power dissipation
- 0.83W
- Peak drain current
- 1.2Atp ≤ 10 µs
- Status
- Active
Product overview
Compact switching for logic-level control.
A practical small-signal MOSFET platform for signal translation, line driving, and low-current load switching.
The 2N7002 is a compact N-channel Trench MOSFET designed for low-current switching, level translation, and interface control. Its small input capacitance and fast switching behavior make it well suited to space-constrained digital and mixed-signal designs.
A 60 V drain-source rating, logic-level gate compatibility, and SOT-23 footprint provide a practical general-purpose building block for low-side switching and signal conditioning.
Logic-level gate drive
Compatible with common low-voltage control and translation stages.
Fast switching
Low capacitance supports responsive signal and load switching.
Trench MOSFET technology
Balances compact geometry with practical on-state performance.
Compact surface-mount package
Three-lead SOT-23 footprint for high-density board layouts.
Typical applications
- Logic-level translators
- High-speed line drivers
- Low-side load switching
- Signal conditioning
- Battery-powered controls
- Industrial interface circuits
Compliance
- RoHS
- Compliant
- REACH
- Compliant
- Lead finish
- Pb-free matte tin
- Moisture sensitivity
- MSL 1
Related products
Also in Small Signal MOSFETs
Engineering support
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